Experiment:
Field Effect Transistor
![Experiment:
Field Effect Transistor, 8000676 [UE3080300-230], Electronics](/imagelibrary/UE3080300-230/UE3080300-230_01_Experiment-Field-Effect-Transistor.jpg)
![Experiment:
Field Effect Transistor, 8000676 [UE3080300-230], Electronics](/thumblibrary/UE3080300-230/UE3080300-230_01_1200_1200_Experiment-Field-Effect-Transistor.jpg)
Experiment:
Field Effect Transistor
Objective: Measure the characteristics of a field effect transistor
A field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field acting perpendicular to the channel. FETs have three contacts, called source, drain and gate due to their respective functions. If a voltage is applied between the source and the drain, then a drain current flows between the two. For small voltages between the drain and source, an FET acts like a simple ohmic resistor with a correspondingly linear characteristic. As the source-drain voltage increases, the channel becomes restricted and eventually is cut off entirely. The characteristic then enters an area of saturation. When the gate voltage is non-zero, the saturation value of the drain current decreases.
Item No.: 8000676 [UE3080300-230]
| Brand | 3B Scientific |
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