Experiment:
Field effect transistors
(115 V, 50/60 Hz)
![Experiment:
Field effect transistors
(115 V, 50/60 Hz), 8000675 [UE3080300-115], Electronics](/imagelibrary/UE3080300-115/UE3080300-115_01_Experiment-Field-effect-transistors-115-V-5060-Hz.jpg)
![Experiment:
Field effect transistors
(115 V, 50/60 Hz), 8000675 [UE3080300-115], Electronics](/thumblibrary/UE3080300-115/UE3080300-115_01_1200_1200_Experiment-Field-effect-transistors-115-V-5060-Hz.jpg)
Experiment:
Field effect transistors
(115 V, 50/60 Hz)
Objective: Measure the characteristics of a field effect transistor
A field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field acting perpendicular to the channel. FETs have three contacts, called source, drain and gate due to their respective functions. If a voltage is applied between the source and the drain, then a drain current flows between the two. For small voltages between the drain and source, an FET acts like a simple ohmic resistor with a correspondingly linear characteristic. As the source-drain voltage increases, the channel becomes restricted and eventually is cut off entirely. The characteristic then enters an area of saturation. When the gate voltage is non-zero, the saturation value of the drain current decreases.
