Experiment: Field effect transistors (230 V, 50/60 Hz)

Experiment: Field effect transistors (230 V, 50/60 Hz), 8000676 [UE3080300-230], Electronics
Objective: Measure the characteristics of a field effect transistor

A field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field acting perpendicular to the channel. FETs have three contacts, called source, drain and gate due to their respective functions. If a voltage is applied between the source and the drain, then a drain current flows between the two. For small voltages between the drain and source, an FET acts like a simple ohmic resistor with a correspondingly linear characteristic. As the source-drain voltage increases, the channel becomes restricted and eventually is cut off entirely. The characteristic then enters an area of saturation. When the gate voltage is non-zero, the saturation value of the drain current decreases.

组件

产品编号: 8000676 [UE3080300-230]
3B 科技 产品型号 3B Scientific